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Groundbreaking Research on Diamond-based GaN Transistors

Researchers at Osaka Metropolitan University have been making waves with their groundbreaking research on the use of diamonds in gallium nitride (GaN) transistors. These high-power, high-frequency semiconductor devices are crucial for mobile data and satellite communication systems. However, as semiconductor devices become smaller, issues with power density and heat generation can arise, impacting their performance and reliability. Effective thermal management is key, and diamond, with its exceptional thermal conductivity, has the potential to be an ideal substrate material for these transistors. The challenge, however, lies in bonding diamond to GaN elements, an obstacle that has yet to be overcome.

Associate Professor Jianbo Liang and Professor Naoteru Shigekawa, leading a research team at the Graduate School of Engineering at Osaka Metropolitan University, have made significant progress in this area. They have successfully fabricated GaN High Electron Mobility Transistors using diamond as a substrate, resulting in transistors with more than twice the heat dissipation performance of those fabricated on a silicon carbide (SiC) substrate. To maximize the thermal conductivity of diamond, the researchers integrated a 3C-SiC layer, a cubic polytype of silicon carbide, between GaN and diamond. This innovative approach has significantly reduced the thermal resistance of the interface and improved heat dissipation.

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“This new technology has the potential to significantly reduce CO₂ emissions and potentially revolutionize the development of power and radio frequency electronics with improved thermal management capabilities,” said Professor Liang. Their findings have been published in the journal Small, and the implications of their research extend beyond the realm of semiconductor devices, with potential implications for environmental sustainability and technological advancement.

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